Deutsch
| Artikelnummer: | 1N5402G B0G |
|---|---|
| Hersteller / Marke: | Taiwan Semiconductor |
| Teil der Beschreibung.: | DIODE GEN PURP 200V 3A DO201AD |
| Datenblätte: |
|
| RoHs Status: | |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
| Produkteigenschaften | Eigenschaften |
|---|---|
| Spannung - Forward (Vf) (Max) @ If | 1 V @ 3 A |
| Spannung - Sperr (Vr) (max) | 200 V |
| Technologie | Standard |
| Supplier Device-Gehäuse | DO-201AD |
| Geschwindigkeit | Standard Recovery >500ns, > 200mA (Io) |
| Serie | - |
| Verpackung / Gehäuse | DO-201AD, Axial |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Paket | Bulk |
| Betriebstemperatur - Anschluss | -55°C ~ 150°C |
| Befestigungsart | Through Hole |
| Strom - Sperrleckstrom @ Vr | 5 µA @ 200 V |
| Strom - Richt (Io) | 3A |
| Kapazität @ Vr, F | 25pF @ 4V, 1MHz |
| Grundproduktnummer | 1N5402 |




RECTRON DO-201
DIODE GEN PURP 200V 3A DO201AD
DIODE GEN PURP 200V 3A DO201AD
DIODE GEN PURP 200V 3A DO201AD
DIODE GEN PURP 200V 3A DO201AD
DIODE GEN PURP 200V 3A DO15
Interface
DIODE GEN PURP 200V 3A DO201AD
DIODE GEN PURP 200V 3A DO201AD
DIODE GEN PURP 200V 3A DO201AD
DIODE GEN PURP 200V 3A DO201AD
DIODE GEN PURP 200V 3A DO201AD
DIODE GEN PURP 200V 3A DO201AD
DIODE GEN PURP 200V 3A DO201AD
DIODE GEN PURP 200V 3A DO201AD
DIODE GEN PURP 200V 3A DO201AD
DIODE GEN PURP 200V 3A DO201AD
DIODE GEN PURP 200V 3A AXIAL
DIODE GEN PURP 200V 3A DO201AD
DIODE GEN PURP 200V 3A AXIAL
2026/03/31
2026/03/23
2026/03/20
2026/03/9
2026/03/4
2026/02/28
2026/02/3
2026/01/28
2026/01/19
2026/01/16
2026/01/9
2025/12/29
2025/12/25
2025/12/17
2025/12/10
2025/12/4
2025/11/25
2025/11/20
2025/11/11
2025/11/3
2025/10/30
2025/10/22
2025/10/16
2025/10/9
2025/09/28
2025/09/17
2025/09/9
2025/09/1
2025/08/25
2025/08/20
2025/07/3
2024/12/18
2023/06/21
2023/04/27
2022/07/1
2021/03/4
2020/09/10
2020/01/23
0 Artikel



2025/01/15
2025/07/10
2025/01/27
2025/06/19
1N5402G B0GTaiwan Semiconductor Corporation |
Anzahl*
|
Zielpreis (USD)
|